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| BC337, BC338 Small Signal Transistors (NPN) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended. max. .022 (0.55) .098 (2.5) C B E On special request, these transistors are also manufactured in the pin configuration TO-18. MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range 1) Value 50 30 45 25 5 800 1 100 6251) 150 -65 to +150 Unit V V V V V mA A mA mW C C BC337 BC338 BC337 BC338 VCES VCES VCEO VCEO VEBO IC ICM IB Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case 4/98 BC337, BC338 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol DC Current Gain at VCE = 1 V, IC = 100 mA Min. Typ. Max. Unit Current Gain Group -16 -25 -40 at VCE = 1 V, IC = 300 mA hFE hFE hFE hFE hFE hFE 100 160 250 60 100 170 160 250 400 130 200 320 250 400 630 - - - - - - - - - nA nA A A Current Gain Group -16 -25 -40 Collector-Emitter Cutoff Current at VCE = 45 V at VCE = 25 V at VCE = 45 V, Tamb = 125 C at VCE = 25 V, Tamb = 125 C Collector-Emitter Breakdown Voltage at IC = 10 mA Collector-Emitter Breakdown Voltage at IC = 0.1 mA Emitter-Base Breakdown Voltage at IE = 0.1 mA Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base-Emitter Voltage at VCE = 1 V, IC = 300 mA Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz BC337 BC338 BC337 BC338 BC338 BC337 BC338 BC337 ICES ICES ICES ICES V(BR)CEO V(BR)CEO V(BR)CES V(BR)CES V(BR)EBO VCEsat VBE fT CCBO RthJA - - - - 20 45 30 50 5 - - - - - 2 2 - - - - - - - - - 100 12 - 100 100 10 10 - - - - - 0.7 1.2 - - 2001) V V V V V V V MHz pF K/W Thermal Resistance Junction to Ambient Air 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case RATINGS AND CHARACTERISTIC CURVES BC337, BC338 RATINGS AND CHARACTERISTIC CURVES BC337, BC338 RATINGS AND CHARACTERISTIC CURVES BC337, BC338 |
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